Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D
- RS Stock No.:
- 145-5875
- Mfr. Part No.:
- C2M0040120D
- Brand:
- Wolfspeed
Subtotal (1 tube of 30 units)*
£1,306.80
(exc. VAT)
£1,568.10
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 210 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £43.56 | £1,306.80 |
*price indicative
- RS Stock No.:
- 145-5875
- Mfr. Part No.:
- C2M0040120D
- Brand:
- Wolfspeed
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -5 V, +20 V | |
| Typical Gate Charge @ Vgs | 115 nC @ 20 V, 115 nC @ 5 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.21mm | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 3.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -5 V, +20 V | ||
Typical Gate Charge @ Vgs 115 nC @ 20 V, 115 nC @ 5 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Width 5.21mm | ||
Transistor Material SiC | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 3.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
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