Vishay SUD50P06-15 Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SUD50P06-15-GE3
- RS Stock No.:
- 152-6380
- Mfr. Part No.:
- SUD50P06-15-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£12.36
(exc. VAT)
£14.83
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 90 unit(s) shipping from 05 January 2026
- Plus 10 unit(s) shipping from 05 January 2026
- Plus 205 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.472 | £12.36 |
| 50 - 120 | £2.226 | £11.13 |
| 125 - 245 | £2.102 | £10.51 |
| 250 - 495 | £1.856 | £9.28 |
| 500 + | £1.732 | £8.66 |
*price indicative
- RS Stock No.:
- 152-6380
- Mfr. Part No.:
- SUD50P06-15-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SUD50P06-15 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 113W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SUD50P06-15 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 113W | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard No | ||
TrenchFET® Power MOSFET
Related links
- Vishay P-Channel MOSFET 60 V, 3-Pin DPAK SUD50P06-15-GE3
- Vishay P-Channel MOSFET 40 V, 3-Pin DPAK SUD50P04-08-GE3
- Vishay TrenchFET P-Channel MOSFET 60 V, 3-Pin DPAK SQD50P06-15L_GE3
- Infineon N-Channel MOSFET 60 V, 3-Pin DPAK IPD079N06L3GATMA1
- Infineon OptiMOS™ Silicon N-Channel MOSFET 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD088N06N3GBTMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 3-Pin DPAK IPD50N06S409ATMA2
