onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK FDB035AN06A0
- RS Stock No.:
- 146-1982
- Mfr. Part No.:
- FDB035AN06A0
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,928.00
(exc. VAT)
£2,312.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 26 December 2025
Units | Per unit | Per Reel* |
---|---|---|
800 + | £2.41 | £1,928.00 |
*price indicative
- RS Stock No.:
- 146-1982
- Mfr. Part No.:
- FDB035AN06A0
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 310 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 95 nC @ 10 V | |
Width | 11.33mm | |
Length | 10.67mm | |
Transistor Material | Si | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 95 nC @ 10 V | ||
Width 11.33mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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