onsemi PowerTrench N-Channel MOSFET, 120 A, 313 A, 60 V, 3-Pin TO-220 FDP020N06B_F102
- RS Stock No.:
- 145-5421
- Mfr. Part No.:
- FDP020N06B_F102
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£157.85
(exc. VAT)
£189.40
(inc. VAT)
Units | Per unit | Per Tube* |
---|---|---|
50 + | £3.157 | £157.85 |
*price indicative
- RS Stock No.:
- 145-5421
- Mfr. Part No.:
- FDP020N06B_F102
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A, 313 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220 | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 333 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.672mm | |
Number of Elements per Chip | 1 | |
Length | 10.36mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 206 nC @ 10 V | |
Height | 15.215mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A, 313 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.672mm | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 206 nC @ 10 V | ||
Height 15.215mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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