ROHM BSM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

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Unavailable
RS will no longer stock this product.
RS Stock No.:
144-2254
Mfr. Part No.:
BSM180D12P3C007
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Package Type

C

Series

BSM

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Width

45.6mm

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

122mm

Number of Elements per Chip

2

Minimum Operating Temperature

-40 °C

Height

17mm

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.


MOSFET Transistors, ROHM Semiconductor

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