onsemi NVD5C684NL N-Channel MOSFET, 38 A, 60 V, 3-Pin DPAK NVD5C684NLT4G
- RS Stock No.:
- 141-7228P
- Mfr. Part No.:
- NVD5C684NLT4G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£93.30
(exc. VAT)
£112.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,080 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.933 |
| 250 + | £0.809 |
*price indicative
- RS Stock No.:
- 141-7228P
- Mfr. Part No.:
- NVD5C684NLT4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | NVD5C684NL | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 27 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 9.6 nC @ 10 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 60 V | ||
Series NVD5C684NL | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 27 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 9.6 nC @ 10 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
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