onsemi NVMFS5C604NL N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN NVMFS5C604NLAFT1G
- RS Stock No.:
- 141-3193P
- Mfr. Part No.:
- NVMFS5C604NLAFT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£42.00
(exc. VAT)
£50.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 February 2026
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Units | Per unit |
|---|---|
| 10 - 99 | £4.20 |
| 100 - 499 | £3.64 |
| 500 - 999 | £3.20 |
| 1000 + | £2.91 |
*price indicative
- RS Stock No.:
- 141-3193P
- Mfr. Part No.:
- NVMFS5C604NLAFT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 287 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Series | NVMFS5C604NL | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 + Tab | |
| Maximum Drain Source Resistance | 1.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5.1mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 287 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Series NVMFS5C604NL | ||
Mounting Type Surface Mount | ||
Pin Count 4 + Tab | ||
Maximum Drain Source Resistance 1.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
Height 1.05mm | ||
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