Nexperia PMV250EPEA P-Channel MOSFET, 1.5 A, 40 V, 3-Pin SOT-23 PMV250EPEAR
- RS Stock No.:
- 136-4864
- Mfr. Part No.:
- PMV250EPEAR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 100 units)*
£8.00
(exc. VAT)
£10.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,000 unit(s) shipping from 12 May 2026
- Plus 6,000 unit(s) shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 500 | £0.08 | £8.00 |
| 600 - 1400 | £0.066 | £6.60 |
| 1500 + | £0.057 | £5.70 |
*price indicative
- RS Stock No.:
- 136-4864
- Mfr. Part No.:
- PMV250EPEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOT-23 | |
| Series | PMV250EPEA | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 6.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 4.7 nC @ -10 V | |
| Length | 3mm | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-23 | ||
Series PMV250EPEA | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 6.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4.7 nC @ -10 V | ||
Length 3mm | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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