Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA90DP-T1-RE3

Subtotal (1 reel of 3000 units)*

£1,653.00

(exc. VAT)

£1,983.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.551£1,653.00

*price indicative

RS Stock No.:
134-9165
Mfr. Part No.:
SIRA90DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Length

6.25mm

Width

5.26mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

Related links