Vishay TrenchFET N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 SIR668DP-T1-RE3
- RS Stock No.:
 - 134-9160
 - Mfr. Part No.:
 - SIR668DP-T1-RE3
 - Brand:
 - Vishay
 
Subtotal (1 reel of 3000 units)*
£2,685.00
(exc. VAT)
£3,222.00
(inc. VAT)
FREE delivery for orders over £50.00
- 6,000 unit(s) ready to ship
 
Units  | Per unit  | Per Reel*  | 
|---|---|---|
| 3000 + | £0.895 | £2,685.00 | 
*price indicative
- RS Stock No.:
 - 134-9160
 - Mfr. Part No.:
 - SIR668DP-T1-RE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 65 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.05 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.25mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.26mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Height | 1.12mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 65 A  | ||
Maximum Drain Source Voltage 100 V  | ||
Series TrenchFET  | ||
Package Type PowerPAK SO-8  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 5.05 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 3.4V  | ||
Minimum Gate Threshold Voltage 2V  | ||
Maximum Power Dissipation 104 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Length 6.25mm  | ||
Number of Elements per Chip 1  | ||
Width 5.26mm  | ||
Maximum Operating Temperature +150 °C  | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V  | ||
Height 1.12mm  | ||
Minimum Operating Temperature -55 °C  | ||
Forward Diode Voltage 1.1V  | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
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