Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

£2,685.00

(exc. VAT)

£3,222.00

(inc. VAT)

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  • 6,000 unit(s) ready to ship
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Units
Per unit
Per Reel*
3000 +£0.895£2,685.00

*price indicative

RS Stock No.:
134-9160
Mfr. Part No.:
SIR668DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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