IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

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£8.51

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£10.21

(inc. VAT)

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  • 45 unit(s) ready to ship
  • Plus 999,999,954 unit(s) shipping from 22 October 2026
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RS Stock No.:
125-8047
Distrelec Article No.:
302-53-421
Mfr. Part No.:
IXTH110N25T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

250 V

Series

Trench

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

694 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.3mm

Number of Elements per Chip

1

Length

16.26mm

Typical Gate Charge @ Vgs

157 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

21.46mm

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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