Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 130 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 520 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 161 nC @ 10 V |
Transistor Material | Si |
Length | 15.87mm |
Minimum Operating Temperature | -55 °C |
Height | 20.7mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Width | 5.31mm |