ROHM RSJ250P10 P-Channel MOSFET, 25 A, 100 V, 3-Pin D2PAK RSJ250P10TL
- RS Stock No.:
- 124-6823P
- Mfr. Part No.:
- RSJ250P10TL
- Brand:
- ROHM
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£33.75
(exc. VAT)
£40.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,995 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.35 |
| 50 - 120 | £1.284 |
| 125 - 245 | £1.216 |
| 250 + | £1.08 |
*price indicative
- RS Stock No.:
- 124-6823P
- Mfr. Part No.:
- RSJ250P10TL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | RSJ250P10 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 50 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 60 nC @ 5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 9mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.1mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.5mm | |
Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 100 V | ||
Series RSJ250P10 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 50 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 60 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 9mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.1mm | ||
Forward Diode Voltage 1.2V | ||
Height 4.5mm | ||
- COO (Country of Origin):
- KR
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor