ROHM RRR040P03 P-Channel MOSFET, 4 A, 30 V, 3-Pin TSMT-3 RQ5E040RPTL
- RS Stock No.:
- 124-6810P
- Mfr. Part No.:
- RQ5E040RPTL
- Brand:
- ROHM
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£23.60
(exc. VAT)
£28.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 3,000 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.236 |
| 200 - 480 | £0.229 |
| 500 - 980 | £0.223 |
| 1000 + | £0.218 |
*price indicative
- RS Stock No.:
- 124-6810P
- Mfr. Part No.:
- RQ5E040RPTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | RRR040P03 | |
| Package Type | TSMT-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 72 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Typical Gate Charge @ Vgs | 10.5 nC @ 5 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Series RRR040P03 | ||
Package Type TSMT-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 72 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.6mm | ||
Typical Gate Charge @ Vgs 10.5 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Height 0.85mm | ||
Forward Diode Voltage 1.2V | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor