Nexperia N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK PSMN1R7-60BS,118
- RS Stock No.:
- 124-2410
- Mfr. Part No.:
- PSMN1R7-60BS,118
- Brand:
- Nexperia
Subtotal (1 reel of 800 units)*
£1,485.60
(exc. VAT)
£1,782.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 04 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.857 | £1,485.60 |
*price indicative
- RS Stock No.:
- 124-2410
- Mfr. Part No.:
- PSMN1R7-60BS,118
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 306 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 137 nC @ 10 V | |
| Width | 11mm | |
| Length | 10.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.5mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 306 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 137 nC @ 10 V | ||
Width 11mm | ||
Length 10.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.5mm | ||
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