STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2
- RS Stock No.:
- 103-2012
- Mfr. Part No.:
- STH3N150-2
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
£2,511.00
(exc. VAT)
£3,013.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.511 | £2,511.00 |
*price indicative
- RS Stock No.:
- 103-2012
- Mfr. Part No.:
- STH3N150-2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 1500 V | |
| Package Type | H2PAK-2 | |
| Series | MDmesh | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 15.8mm | |
| Typical Gate Charge @ Vgs | 29.3 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 4.8mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 1500 V | ||
Package Type H2PAK-2 | ||
Series MDmesh | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 15.8mm | ||
Typical Gate Charge @ Vgs 29.3 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 4.8mm | ||
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