Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080
- RS Stock No.:
- 869-230
- Mfr. Part No.:
- VS-HOT200C080
- Brand:
- Vishay
Get a bulk buy discount
Add 10 more to save 19%
View bulk pricing optionsSubtotal (1 unit)*
£21.03
(exc. VAT)
£25.24
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 08 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | £21.03 | - |
| 10 - 99 | £16.85 | 19% |
| 100 - 575 | £14.55 | 30% |
| 576 + | £13.77 | 34% |
*price indicative
- RS Stock No.:
- 869-230
- Mfr. Part No.:
- VS-HOT200C080
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | FlatPAK 5 x 6 | |
| Series | VS-H | |
| Mount Type | Screw | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 194W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | UL 94 V-0 | |
| Width | 22.8mm | |
| Height | 12.7mm | |
| Length | 30mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type FlatPAK 5 x 6 | ||
Series VS-H | ||
Mount Type Screw | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 194W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals UL 94 V-0 | ||
Width 22.8mm | ||
Height 12.7mm | ||
Length 30mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Vishay power module designed for half-bridge applications with Advanced features for current and temperature sensing. This innovative solution provides efficient power management and reliability.
Supports current and temperature sensing for enhanced reliability
Utilises an electrically isolated DBC substrate to minimise EMI
Passes rigorous AQG324 qualification for automotive applications
Operates at a maximum junction temperature of 175 °C, ensuring durability
Delivers low on-resistance values of 0.45 mΩ for improved efficiency
Related links
- Vishay 170 V 15 A Rectifier & Schottky Diode Schottky 8-Pin FlatPAK 5 x 6
- Vishay 120 V 30 A Diode Schottky 8-Pin FlatPAK 5 x 6 V30KM120HM3/H
- Vishay 200 V 8 A Rectifier & Schottky Diode Schottky 8-Pin FlatPAK 5 x 6 V8K202DUHM3/H
- Vishay 200 V 30 A Diode Schottky 8-Pin FlatPAK 5 x 6 V30K202HM3/H
- Vishay 60 V 30 A Diode Schottky 8-Pin FlatPAK 5 x 6 V30KM60HM3/H
- Vishay R3T2FPHM3/I 1-Element Bi-Directional TVS Diode 8-Pin FlatPAK 5 x 6
- Vishay 200 V 30 A Diode Schottky 8-Pin FlatPAK 5 x 6
- Vishay 170 V 10 A Rectifier & Schottky Diode Schottky 8-Pin FlatPAK 5 x 6