ROHM R8019KNZ4 N-Channel MOSFET, 19 A, 800 V, 3-Pin TO-247 R8019KNZ4C13

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Subtotal (1 bag of 2 units)*

£9.54

(exc. VAT)

£11.44

(inc. VAT)

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Units
Per unit
Per Bag*
2 - 18£4.77£9.54
20 - 98£4.20£8.40
100 - 198£3.77£7.54
200 +£2.965£5.93

*price indicative

Packaging Options:
RS Stock No.:
687-367
Mfr. Part No.:
R8019KNZ4C13
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

800 V

Series

R8019KNZ4

Package Type

TO-247

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.

Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.

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