ROHM RY7P250BM N-Channel Single MOSFETs, 300 A, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- RS Stock No.:
- 687-343
- Mfr. Part No.:
- RY7P250BMTBC
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
£9.50
(exc. VAT)
£11.40
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 134 unit(s) shipping from 26 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | £4.75 | £9.50 |
| 20 - 98 | £4.18 | £8.36 |
| 100 - 198 | £3.755 | £7.51 |
| 200 + | £2.95 | £5.90 |
*price indicative
- RS Stock No.:
- 687-343
- Mfr. Part No.:
- RY7P250BMTBC
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RY7P250BM | |
| Package Type | DFN8080T8LSHAAI | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RY7P250BM | ||
Package Type DFN8080T8LSHAAI | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Length 1.7mm | ||
Width 1.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.
Related links
- ROHM RSG120 N-Channel Single MOSFETs 40 V Enhancement, 8-Pin HSOP-8 RS6G120CHTB1
- Vishay SQJ131ELP Type P-Channel Single MOSFETs -30 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ131ELP Type P-Channel Single MOSFETs -30 V Enhancement, 4-Pin PowerPAK SQJ131ELP-T1_GE3
- Vishay SQS146 N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK SQS146ELNW-T1_GE3
- ROHM RS7N160 N-Channel Single MOSFETs 80 V Enhancement, 8-Pin DFN5060-8S RS7N160BHTB1
- ROHM HT8MD5HT Dual N-Channel Single MOSFETs 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- Infineon CoolGaN G5 N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R080D2XUMA1
- Vishay SISS176LDN N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3