Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23

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RS Stock No.:
653-160
Mfr. Part No.:
SQ2389CES-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

-4.1A

Maximum Drain Source Voltage Vds

-40V

Package Type

SOT-23

Series

SQ2389CES

Mount Type

PCB

Pin Count

3

Maximum Drain Source Resistance Rds

0.094Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

3W

Maximum Operating Temperature

175°C

Length

3.04mm

Standards/Approvals

RoHS

Width

2.64mm

Automotive Standard

AEC-Q101

Vishay SQ2389CES Series Single MOSFETs, -40V Maximum Drain Source Voltage, -4.1A Maximum Continuous Drain Current - SQ2389CES-T1_GE3


This single MOSFETs device is a P‑channel enhancement‑mode transistor designed for use on printed circuit boards in automotive and industrial control environments. It provides high‑temperature operation and low forward voltage for switching and protection roles within systems that require Compact SOT‑23 packaging and automotive‑grade robustness.

Features and Benefits:


• -40V rating enables handling of moderate negative rail voltages for switching
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments

Applications


• Suitable for high‑side switching in automotive electronic modules
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers

What package should I plan for on the PCB footprint?


The device comes in a three‑lead SOT‑23 package, requiring a small surface‑mount footprint compatible with standard SOT‑23 land patterns.

How does gate drive voltage influence use in systems?


The gate may be driven up to 20 V

ensure gate‑source excursions remain within that limit to avoid device stress.

What thermal considerations apply for sustained operation?


With a maximum junction temperature of 175 °C and 3W dissipation, thermal management such as copper pours or heatsinking is recommended for continuous high‑power use.

Can it meet automotive environmental demands?


It is qualified to AEC‑Q101 stress tests and is RoHS‑compliant, aligning with automotive component requirements.

What are the expected switching characteristics?


Typical gate charge of 12 nC indicates a modest charge requirement, supporting relatively low driving energy for switching transitions.

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