Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS Stock No.:
- 351-988
- Mfr. Part No.:
- AIMZA75R008M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£47.43
(exc. VAT)
£56.92
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £47.43 |
| 10 - 99 | £42.69 |
| 100 + | £39.37 |
*price indicative
- RS Stock No.:
- 351-988
- Mfr. Part No.:
- AIMZA75R008M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 5.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.9 mm | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 5.3V | ||
Maximum Operating Temperature 175°C | ||
Width 15.9 mm | ||
Length 21.1mm | ||
Height 5.1mm | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- AT
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
Related links
- Infineon IMZA75 SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R008M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R020M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R027M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R027M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1