Infineon IMZ SiC N-Channel MOSFET, 103 A, 650 V, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- RS Stock No.:
- 349-334
- Mfr. Part No.:
- IMZA65R015M2HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£19.60
(exc. VAT)
£23.52
(inc. VAT)
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- Shipping from 01 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £19.60 |
| 10 - 99 | £17.64 |
| 100 + | £16.27 |
*price indicative
- RS Stock No.:
- 349-334
- Mfr. Part No.:
- IMZA65R015M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 103 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-TO247-4 | |
| Series | IMZ | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 103 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO247-4 | ||
Series IMZ | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, delivering unparalleled performance, superior reliability, and ease of use. This advanced MOSFET enables cost effective, highly efficient, and simplified designs, addressing the ever growing needs of modern power systems and markets. It offers a powerful solution for achieving superior system efficiency in various applications, ensuring optimal performance in demanding environments.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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