Infineon IMZ SiC N-Channel MOSFET, 103 A, 650 V, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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RS Stock No.:
349-334
Mfr. Part No.:
IMZA65R015M2HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

103 A

Maximum Drain Source Voltage

650 V

Series

IMZ

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, delivering unparalleled performance, superior reliability, and ease of use. This advanced MOSFET enables cost effective, highly efficient, and simplified designs, addressing the ever growing needs of modern power systems and markets. It offers a powerful solution for achieving superior system efficiency in various applications, ensuring optimal performance in demanding environments.

Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance

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