MPN

Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1

RS Stock No.:: 351-971
Mfr. Part No.:: IGC033S10S1XTMA1
Brand:: Infineon

Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£6.13

(exc. VAT)

£7.356

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

5,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£3.065	£6.13
20 - 198	£2.76	£5.52
200 - 998	£2.545	£5.09
1000 - 1998	£2.36	£4.72
2000 +	£2.115	£4.23

*price indicative

RS Stock No.:: 351-971
Mfr. Part No.:: IGC033S10S1XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	76A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-VSON-6
	Series	IGC033
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	5.5 V
	Maximum Power Dissipation Pd	45W
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Operating Temperature	150°C
	Width	3.1 mm
	Standards/Approvals	JEDEC
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 76A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-VSON-6
	Series IGC033
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 5.5 V
	Maximum Power Dissipation Pd 45W
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Operating Temperature 150°C
	Width 3.1 mm
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGC033S10S1XTMA1

COO (Country of Origin):: MY

The Infineon CoolGaN Transistor is a normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Best in class power density

Highest efficiency

Improved thermal management

Enabling smaller and lighter designs

Excellent reliability

Lowering BOM cost