Name: Infineon IGLR65 GaN N-Channel MOSFET Transistor, 9.2 A, 650 V, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1
Brand: Infineon
SKU: 351-877
Price: 2.15 GBP
Availability: OutOfStock

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.2 A
	Maximum Drain Source Voltage	650 V
	Series	IGLR65
	Package Type	PG-TSON-8
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	GaN

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.2 A
	Maximum Drain Source Voltage 650 V
	Series IGLR65
	Package Type PG-TSON-8
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material GaN

Infineon IGLR65 GaN N-Channel MOSFET Transistor, 9.2 A, 650 V, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

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