MPN

Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

RS Stock No.:: 351-877
Mfr. Part No.:: IGLR65R200D2XUMA1
Brand:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£8.94

(exc. VAT)

£10.73

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

5,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£1.788	£8.94
50 - 95	£1.698	£8.49
100 - 495	£1.574	£7.87
500 - 995	£1.448	£7.24
1000 +	£1.394	£6.97

*price indicative

RS Stock No.:: 351-877
Mfr. Part No.:: IGLR65R200D2XUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	650V
	Series	IGLR65
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.24Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	1.26nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	34W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 650V
	Series IGLR65
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.24Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 1.26nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 34W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R200D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)