MPN

Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

RS Stock No.:: 351-876
Mfr. Part No.:: IGLR65R140D2XUMA1
Brand:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

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Subtotal (1 pack of 5 units)*

£13.60

(exc. VAT)

£16.30

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,995 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£2.72	£13.60
50 - 95	£2.584	£12.92
100 +	£2.394	£11.97

*price indicative

RS Stock No.:: 351-876
Mfr. Part No.:: IGLR65R140D2XUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TSON-8
	Series	IGLR65
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.17Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.8nC
	Maximum Power Dissipation Pd	47W
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TSON-8
	Series IGLR65
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.17Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.8nC
	Maximum Power Dissipation Pd 47W
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R140D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer and industrial applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)