Infineon IPT N-Channel MOSFET, 297 A, 135 V, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1

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RS Stock No.:
349-133
Mfr. Part No.:
IPTC020N13NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

297 A

Maximum Drain Source Voltage

135 V

Series

IPT

Package Type

PG-HSOF-16

Mounting Type

Surface Mount

Pin Count

16

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high performance power applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and enhancing efficiency. The MOSFET features an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts a very low reverse recovery charge (Qrr), optimizing efficiency during switching events. With a high avalanche energy rating, it ensures reliability under demanding conditions and operates effectively at 175°C, making it ideal for high temperature environments.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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