Infineon IMB SiC N-Channel MOSFET, 8.1 A, 1200 V, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- RS Stock No.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Brand:
- Infineon
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- RS Stock No.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.1 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.1 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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