Name: Infineon IMB SiC N-Channel MOSFET, 21.2 A, 1200 V, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1
Brand: Infineon
SKU: 349-104
Price: 6.46 GBP
Availability: OutOfStock

The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.

Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	21.2 A
	Maximum Drain Source Voltage	1200 V
	Series	IMB
	Package Type	PG-TO263-7
	Mounting Type	Surface Mount
	Pin Count	7
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 21.2 A
	Maximum Drain Source Voltage 1200 V
	Series IMB
	Package Type PG-TO263-7
	Mounting Type Surface Mount
	Pin Count 7
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon IMB SiC N-Channel MOSFET, 21.2 A, 1200 V, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1

Related links

Be the first to know about our latest products and services