Infineon P-Channel MOSFET Depletion FS3L40R07W2H5FB70BPSA1

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Subtotal (1 unit)*

£138.75

(exc. VAT)

£166.50

(inc. VAT)

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RS Stock No.:
348-982
Mfr. Part No.:
FS3L40R07W2H5FB70BPSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Channel Mode

Depletion

COO (Country of Origin):
DE
The Infineon EasyPACK 2B 650 V 40 A 3-Level NPC1 Full-Bridge IGBT Module is designed for high efficiency power applications, featuring CoolSiC Schottky Diode Gen 5 and TRENCHSTOP 5 H5 technology. This module offers increased blocking voltage capability of up to 650 V, providing enhanced performance in demanding power systems. The use of CoolSiC Schottky Diode Gen 5 ensures minimal power losses and improved efficiency in high speed switching applications.

Enabling higher frequency
Outstanding module efficiency
System efficiency improvement
System cost advantages
Reduced cooling requirements
Longer life time and/or higher power density

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Infineon CoolSic Schottky Diode
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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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