Infineon FS3L40R07W2H5F_B70 Type P-Channel MOSFET Depletion EasyPACK 2B FS3L40R07W2H5FB70BPSA1
- RS Stock No.:
- 348-982
- Mfr. Part No.:
- FS3L40R07W2H5FB70BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£138.75
(exc. VAT)
£166.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 November 2027
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Units | Per unit |
|---|---|
| 1 + | £138.75 |
*price indicative
- RS Stock No.:
- 348-982
- Mfr. Part No.:
- FS3L40R07W2H5FB70BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Series | FS3L40R07W2H5F_B70 | |
| Package Type | EasyPACK 2B | |
| Mount Type | Screw | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 60068, 60749, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Series FS3L40R07W2H5F_B70 | ||
Package Type EasyPACK 2B | ||
Mount Type Screw | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 60068, 60749, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B 650 V 40 A 3-Level NPC1 Full-Bridge IGBT Module is designed for high efficiency power applications, featuring CoolSiC Schottky Diode Gen 5 and TRENCHSTOP 5 H5 technology. This module offers increased blocking voltage capability of up to 650 V, providing enhanced performance in demanding power systems. The use of CoolSiC Schottky Diode Gen 5 ensures minimal power losses and improved efficiency in high speed switching applications.
Enabling higher frequency
Outstanding module efficiency
System efficiency improvement
System cost advantages
Reduced cooling requirements
Longer life time and/or higher power density
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