Microchip TN0604 Silicon N-Channel MOSFET, 700 mA, 40 V, 3-Pin TO-92 TN0604N3-G
- RS Stock No.:
- 333-281
- Mfr. Part No.:
- TN0604N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£1,552.00
(exc. VAT)
£1,862.00
(inc. VAT)
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Units | Per unit | Per Bag* |
---|---|---|
1000 + | £1.552 | £1,552.00 |
*price indicative
- RS Stock No.:
- 333-281
- Mfr. Part No.:
- TN0604N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 700 mA | |
Maximum Drain Source Voltage | 40 V | |
Series | TN0604 | |
Package Type | TO-92 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 700 mA | ||
Maximum Drain Source Voltage 40 V | ||
Series TN0604 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
The Microchip Enhancement mode transistor uses a vertical DMOS structure and a well proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
1.6V maximum low threshold
High input impedance
140 pF typical low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
140 pF typical low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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