Microchip TN0702 Silicon N-Channel MOSFET, 530 A, 20 V, 3-Pin TO-92 TN0702N3-G
- RS Stock No.:
- 333-075
- Mfr. Part No.:
- TN0702N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£1,670.00
(exc. VAT)
£2,000.00
(inc. VAT)
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £1.67 | £1,670.00 |
*price indicative
- RS Stock No.:
- 333-075
- Mfr. Part No.:
- TN0702N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 530 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TO-92 | |
| Series | TN0702 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 530 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TO-92 | ||
Series TN0702 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip Low threshold Enhancement mode transistor uses a vertical DMOS structure and a well proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
1.6V maximum low threshold
High input impedance
130 pF typical low input capacitance
Fast switching speeds
Low on resistance guaranteed at VGS 2V 3V and 5V
Free from secondary breakdown
Low input and output leakage
High input impedance
130 pF typical low input capacitance
Fast switching speeds
Low on resistance guaranteed at VGS 2V 3V and 5V
Free from secondary breakdown
Low input and output leakage
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