STMicroelectronics STF Type N-Channel MOSFET, 6 A, 80 V, 3-Pin TO-220FP
- RS Stock No.:
- 330-466
- Mfr. Part No.:
- STF80N900K6
- Brand:
- STMicroelectronics
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Units | Per unit |
|---|---|
| 1 + | £1.30 |
*price indicative
- RS Stock No.:
- 330-466
- Mfr. Part No.:
- STF80N900K6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220FP | |
| Series | STF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 21.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Length | 30.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220FP | ||
Series STF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 21.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Length 30.6mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
The STMicroelectronics High voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
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