N-Channel MOSFET, 21 A, 200 V, 3-Pin TO-220 Infineon BUZ30AHXKSA1

  • RS Stock No. 298-342
  • Mfr. Part No. BUZ30AHXKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 21 A
Maximum Drain Source Voltage 200 V
Maximum Drain Source Resistance 130 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 125 W
Number of Elements per Chip 1
Length 10mm
Series SIPMOS
Transistor Material Si
Minimum Operating Temperature -55 °C
Height 9.25mm
Maximum Operating Temperature +150 °C
Width 4.4mm
69 In stock for FREE next working day delivery
Price Each
£ 2.44
(exc. VAT)
£ 2.93
(inc. VAT)
Units
Per unit
1 - 4
£2.44
5 - 19
£2.00
20 - 49
£1.83
50 - 99
£1.70
100 +
£1.58
Packaging Options:
Related Products
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching ...
RD3T100CN is a power MOSFET with low on-resistance ...
Description:
RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. Low on-resistanceFast switching speedDrive circuits can be simpleParallel use is easyPb-free plating.
Power MOSFETs are made as low ON-resistance devices ...
Description:
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. 10V-drive typeNch Power MOSFETFast Switching SpeedDrive circuits can be simpleParallel use is easyPb Free.
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • Voltage controlled P-Channel small signal switch• High-Density cell design • ...