BUZ30AHXKSA1 N-Channel MOSFET, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon

  • RS Stock No. 298-342
  • Mfr. Part No. BUZ30AHXKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 21 A
Maximum Drain Source Voltage 200 V
Maximum Drain Source Resistance 130 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 125 W
Number of Elements per Chip 1
Transistor Material Si
Height 9.25mm
Series SIPMOS
Width 4.4mm
Dimensions 10 x 4.4 x 9.25mm
Length 10mm
Minimum Operating Temperature -55 °C
Typical Input Capacitance @ Vds 1400 pF@ 25 V
Typical Turn-Off Delay Time 250 ns
Typical Turn-On Delay Time 30 ns
Maximum Operating Temperature +150 °C
69 In stock for FREE next working day delivery
Price Each
£ 2.44
(exc. VAT)
£ 2.93
(inc. VAT)
Units
Per unit
1 - 4
£2.44
5 - 19
£2.00
20 - 49
£1.83
50 - 99
£1.70
100 +
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