Infineon OptiMOS SiC N-Channel MOSFET, 447 A, 60 V, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1

Subtotal (1 reel of 5000 units)*

£10,070.00

(exc. VAT)

£12,085.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£2.014£10,070.00

*price indicative

RS Stock No.:
284-944
Mfr. Part No.:
IQDH88N06LM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

447 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can trust this product to meet stringent operational demands while maintaining safety and durability.

Optimised thermal resistance for cooling
Qualified for industrial reliability
Pb free lead plating for eco friendliness
Low gate drive requirements simplify circuits
Robust design for high drain currents
100% avalanche tested for reliability
Compact package for easy integration

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