Infineon EasyDUAL Dual SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- RS Stock No.:
- 284-821
- Mfr. Part No.:
- FF17MR12W1M1HB11BPSA1
- Brand:
- Infineon
Subtotal (1 tray of 24 units)*
£2,085.312
(exc. VAT)
£2,502.384
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 24 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 + | £86.888 | £2,085.31 |
*price indicative
- RS Stock No.:
- 284-821
- Mfr. Part No.:
- FF17MR12W1M1HB11BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY1B | |
| Series | EasyDUAL | |
| Pin Count | 23 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY1B | ||
Series EasyDUAL | ||
Pin Count 23 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, durable construction.
Low inductive design optimises dynamic performance
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
Related links
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB70BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HPB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HPB11BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF16MR12W1M1HFB67BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF8MR12W1M1HFB67BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF14MR12W1M1HFB67BPSA1