Infineon EasyPACK Dual SiC N-Channel MOSFET, 30 A, 1200 V, 23-Pin AG-EASY1B DF14MR12W1M1HFB67BPSA1
- RS Stock No.:
- 284-812
- Mfr. Part No.:
- DF14MR12W1M1HFB67BPSA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-812
- Mfr. Part No.:
- DF14MR12W1M1HFB67BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 1200 V | |
Series | EasyPACK | |
Package Type | AG-EASY1B | |
Pin Count | 23 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series EasyPACK | ||
Package Type AG-EASY1B | ||
Pin Count 23 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
The Infineon MOSFET Module is designed with robust performance in mind, integrating advanced CoolSiC Trench MOSFET technology for enhanced efficiency and thermal management. This module not only excels in high current density applications but also ensures low inductive design, making it ideal for demanding industrial environments. Suitable for various applications, including photovoltaic systems, this module stands out for its reliability and compliance with international standards, reflecting quality and precision in engineering.
High performance NTC sensor for thermal monitoring
PressFIT technology simplifies installation and boosts durability
Isolation test voltage ensures reliability in extremes
Low on resistance maximizes power efficiency
Complies with IEC standards for industrial reliability
Rugged design withstands challenging environments
PressFIT technology simplifies installation and boosts durability
Isolation test voltage ensures reliability in extremes
Low on resistance maximizes power efficiency
Complies with IEC standards for industrial reliability
Rugged design withstands challenging environments
Related links
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF14MR12W1M1HFB67BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF16MR12W1M1HFB67BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF8MR12W1M1HFB67BPSA1
- Infineon EasyPACK SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF17MR12W1M1HFB68BPSA1
- Infineon EasyPACK 3 SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF11MR12W1M1HFB67BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB70BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HPB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1