Infineon OptiMOS SiC N-Channel MOSFET, 56 A, 150 V, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
284-650
Mfr. Part No.:
BSC160N15NS5SCATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

150 V

Package Type

PG-WSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS Power MOSFET is engineered to deliver exceptional performance in high frequency switching applications. With a robust 150V rating, it serves as a reliable solution for industrial and automotive electronics. The dual side cooled PG WSON 8 package ensures minimal thermal resistance, allowing for efficient heat dissipation even under heavy load conditions. Designed for N channel operation, this MOSFET excels in synchronous rectification, making it ideal for power management tasks where efficiency and reliability are paramount. Manufacturers can trust this component to meet stringent requirements, delivering effective and stable performance in demanding environments.

Optimised for high frequency operation
Dual side cooling lowers thermal resistance
Pb free lead plating for RoHS compliance
Excellent gate charge performance boosts efficiency
Ideal for synchronous rectification applications
Operates at high temperatures without efficiency loss
Qualified to JEDEC standards for industry

Related links