Name: Infineon OptiMOS SiC N-Channel MOSFET, 89 A, 150 V, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1
Brand: Infineon
SKU: 284-644
Price: 2.55 GBP
Availability: OutOfStock

The Infineon OptiMOS Power MOSFET is a high performance N channel MOSFET designed for demanding applications requiring optimal efficiency. With an operating voltage of up to 150 V and outstanding thermal performance. Engineered with dual side cooling technology, it provides exceptional thermal resistance, thereby ensuring reliable operation even under challenging conditions. The integration of innovative design elements reduces on resistance and enhances the overall efficiency of power management systems. Ideal for industrial applications, its robust construction guarantees longevity and reliable performance.

Dual side cooled package for thermal management
Excellent power efficiency for high frequency use
Wide operating temperature range for reliability
Low on resistance enhances energy efficiency
Fast switching speeds for advanced power applications
Qualified to JEDEC standards for industry

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	89 A
	Maximum Drain Source Voltage	150 V
	Package Type	PG-WSON-8
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 89 A
	Maximum Drain Source Voltage 150 V
	Package Type PG-WSON-8
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon OptiMOS SiC N-Channel MOSFET, 89 A, 150 V, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1

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