Infineon OptiMOS SiC N-Channel MOSFET, 77 A, 150 V, 8-Pin PG-WSON-8 BSC110N15NS5SCATMA1

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Packaging Options:
RS Stock No.:
284-648P
Mfr. Part No.:
BSC110N15NS5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

77 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS

Package Type

PG-WSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS Power MOSFET stands as a pinnacle of performance in the realm of MOSFET technology. Designed for demanding industrial applications, it offers superior efficiency and reliability, making it an ideal choice for high frequency switching and synchronous rectification. With innovative dual side cooling and an operating temperature capability of up to 175°C, this device ensures robust operation even under significant thermal stress. The infusion of advanced materials further enhances its thermal stability and reliability, ensuring that it meets the strictest industry standards. With its comprehensive validation to JEDEC standards, this MOSFET is tailored for engineers seeking excellence in power electronics.

Exceptional thermal resistance for reliability
N channel design for versatile switching
Streamlined package for space efficiency
Qualified for industrial applications' performance
Optimised for high frequency technology designs