Infineon OptiMOS SiC N-Channel MOSFET, 171 A, 100 V, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
284-636
Mfr. Part No.:
BSC023N08NS5SCATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

171 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS Power MOSFET is engineered to excel in demanding applications requiring high efficiency and robust performance. Designed with an innovative PG WSON 8 package, this transistor delivers excellent thermal management, ensuring optimal heat dissipation during operation. Moreover, its dual side cooling capability significantly enhances thermal performance, and the extended operational temperature range allows for greater versatility in various environments. With a focus on reliability, this device has undergone rigorous testing to ensure it meets the stringent quality standards expected in industrial applications, making it a reliable choice for engineers looking to improve system performance while managing thermal constraints.

High efficiency minimizes energy loss
Dual side cooling enhances thermal management
Compact design for space saving integration
Meets high reliability standards
Suitable for various industrial applications

Related links