Name: Infineon OptiMOS SiC N-Channel MOSFET, 171 A, 100 V, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1
Brand: Infineon
SKU: 284-636
Price: 2.27 GBP
Availability: OutOfStock

The Infineon OptiMOS Power MOSFET is engineered to excel in demanding applications requiring high efficiency and robust performance. Designed with an innovative PG WSON 8 package, this transistor delivers excellent thermal management, ensuring optimal heat dissipation during operation. Moreover, its dual side cooling capability significantly enhances thermal performance, and the extended operational temperature range allows for greater versatility in various environments. With a focus on reliability, this device has undergone rigorous testing to ensure it meets the stringent quality standards expected in industrial applications, making it a reliable choice for engineers looking to improve system performance while managing thermal constraints.

High efficiency minimizes energy loss
Dual side cooling enhances thermal management
Compact design for space saving integration
Meets high reliability standards
Suitable for various industrial applications

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	171 A
	Maximum Drain Source Voltage	100 V
	Package Type	PG-WSON-8
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 171 A
	Maximum Drain Source Voltage 100 V
	Package Type PG-WSON-8
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon OptiMOS SiC N-Channel MOSFET, 171 A, 100 V, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1

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