STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6

View all MOSFETs

Subtotal (1 reel of 1000 units)*

£4,507.00

(exc. VAT)

£5,408.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£4.507£4,507.00

*price indicative

RS Stock No.:
214-850
Mfr. Part No.:
STB45N60DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

210W

Typical Gate Charge Qg @ Vgs

44nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

10.4 mm

Length

15.85mm

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Extremely high dv/dt ruggedness

Zener protected

Related links