IXYS HiperFET, Polar N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P
- RS Stock No.:
- 194-237P
- Mfr. Part No.:
- IXFH120N15P
- Brand:
- IXYS
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£40.55
(exc. VAT)
£48.65
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 35 unit(s) ready to ship
- Plus 999,999,964 unit(s) shipping from 03 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 19 | £8.11 |
| 20 - 49 | £7.63 |
| 50 - 99 | £6.52 |
| 100 + | £6.25 |
*price indicative
- RS Stock No.:
- 194-237P
- Mfr. Part No.:
- IXFH120N15P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TO-247AD | |
| Series | HiperFET, Polar | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 600 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 16.26mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Width | 5.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.46mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-247AD | ||
Series HiperFET, Polar | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 600 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 16.26mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 5.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 21.46mm | ||
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