IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
- RS Stock No.:
- 193-543P
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
Save 0% when you buy 10 units
Subtotal 10 units (supplied in a tube)*
£88.60
(exc. VAT)
£106.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,999 unit(s) shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £8.86 |
*price indicative
- RS Stock No.:
- 193-543P
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 69 A | |
| Maximum Drain Source Voltage | 300 V | |
| Series | HiperFET, Polar | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 49 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 500 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 16.26mm | |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.46mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 69 A | ||
Maximum Drain Source Voltage 300 V | ||
Series HiperFET, Polar | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 49 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 500 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 16.26mm | ||
Typical Gate Charge @ Vgs 156 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 21.46mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS