STMicroelectronics SuperMESH Type N-Channel MOSFET, 2 A, 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 20 units)*

£5.30

(exc. VAT)

£6.36

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,440 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
20 - 180£0.265£5.30
200 - 480£0.251£5.02
500 - 980£0.233£4.66
1000 - 1980£0.215£4.30
2000 +£0.207£4.14

*price indicative

Packaging Options:
RS Stock No.:
151-935
Mfr. Part No.:
STD2HNK60Z
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.6 mm

Height

2.4mm

Length

10.1mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

Related links