STMicroelectronics SuperMESH Type N-Channel MOSFET, 85 A, 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- RS Stock No.:
- 151-902
- Mfr. Part No.:
- STD2NK100Z
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
£14.80
(exc. VAT)
£17.80
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 1,880 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £1.48 | £14.80 |
| 100 - 240 | £1.403 | £14.03 |
| 250 - 490 | £1.303 | £13.03 |
| 500 - 990 | £1.20 | £12.00 |
| 1000 + | £1.152 | £11.52 |
*price indicative
- RS Stock No.:
- 151-902
- Mfr. Part No.:
- STD2NK100Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Series | SuperMESH | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 159°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Series SuperMESH | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 159°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Related links
- STMicroelectronics SuperMESH Type N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 STD5NK40ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4