onsemi TF412ST5G, Single Type N-Channel JFET-Channel JFET, 30 V 1.2 to 3 mA, 3-Pin SOT-883
- RS Stock No.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
£10.20
(exc. VAT)
£12.25
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 5,200 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | £0.204 | £10.20 |
| 500 - 950 | £0.176 | £8.80 |
| 1000 - 2450 | £0.152 | £7.60 |
| 2500 - 4950 | £0.134 | £6.70 |
| 5000 + | £0.122 | £6.10 |
*price indicative
- RS Stock No.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | JFET | |
| Channel Type | Type N | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-883 | |
| Maximum Power Dissipation Pd | 100mW | |
| Drain Source Current Ids | 1.2 to 3 mA | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.08mm | |
| Standards/Approvals | No | |
| Height | 0.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type JFET | ||
Channel Type Type N | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-883 | ||
Maximum Power Dissipation Pd 100mW | ||
Drain Source Current Ids 1.2 to 3 mA | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 1.08mm | ||
Standards/Approvals No | ||
Height 0.41mm | ||
Automotive Standard No | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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