onsemi MMBF4391LT1G N-Channel JFET, 30 V, Idss 50 to 150mA, 3-Pin SOT-23
- RS Stock No.:
- 163-2337
- Mfr. Part No.:
- MMBF4391LT1G
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£204.00
(exc. VAT)
£246.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 3,000 unit(s) shipping from 25 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.068 | £204.00 |
*price indicative
- RS Stock No.:
- 163-2337
- Mfr. Part No.:
- MMBF4391LT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 50 to 150mA | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | +30 V | |
| Maximum Drain Gate Voltage | 30V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Maximum Drain Source Resistance | 30 Ω | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Dimensions | 2.9 x 1.3 x 0.94mm | |
| Height | 0.94mm | |
| Minimum Operating Temperature | -55 °C | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 50 to 150mA | ||
Maximum Drain Source Voltage 30 V | ||
Maximum Gate Source Voltage +30 V | ||
Maximum Drain Gate Voltage 30V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Maximum Drain Source Resistance 30 Ω | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Dimensions 2.9 x 1.3 x 0.94mm | ||
Height 0.94mm | ||
Minimum Operating Temperature -55 °C | ||
Width 1.3mm | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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