onsemi TF412ST5G N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
- RS Stock No.:
- 163-0319
- Mfr. Part No.:
- TF412ST5G
- Brand:
- onsemi
Subtotal (1 reel of 8000 units)*
£464.00
(exc. VAT)
£560.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 17 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 8000 + | £0.058 | £464.00 |
*price indicative
- RS Stock No.:
- 163-0319
- Mfr. Part No.:
- TF412ST5G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 1.2 to 3mA | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Drain Gate Voltage | -30V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-883 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 4pF | |
| Source Gate On-Capacitance | 4pF | |
| Dimensions | 1.08 x 0.68 x 0.41mm | |
| Height | 0.41mm | |
| Width | 0.68mm | |
| Maximum Power Dissipation | 100 mW | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.08mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 1.2 to 3mA | ||
Maximum Drain Source Voltage 30 V | ||
Maximum Drain Gate Voltage -30V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-883 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 4pF | ||
Source Gate On-Capacitance 4pF | ||
Dimensions 1.08 x 0.68 x 0.41mm | ||
Height 0.41mm | ||
Width 0.68mm | ||
Maximum Power Dissipation 100 mW | ||
Maximum Operating Temperature +150 °C | ||
Length 1.08mm | ||
- COO (Country of Origin):
- MY
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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