onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23
- RS Stock No.:
- 166-1840
- Mfr. Part No.:
- MMBFJ201
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£231.00
(exc. VAT)
£276.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,000 unit(s) shipping from 13 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.077 | £231.00 |
*price indicative
- RS Stock No.:
- 166-1840
- Mfr. Part No.:
- MMBFJ201
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 0.3 to 1.5mA | |
| Maximum Gate Source Voltage | -40 V | |
| Maximum Drain Gate Voltage | 40V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Dimensions | 2.92 x 1.3 x 0.93mm | |
| Length | 2.92mm | |
| Width | 1.3mm | |
| Height | 0.93mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 0.3 to 1.5mA | ||
Maximum Gate Source Voltage -40 V | ||
Maximum Drain Gate Voltage 40V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Dimensions 2.92 x 1.3 x 0.93mm | ||
Length 2.92mm | ||
Width 1.3mm | ||
Height 0.93mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, Fairchild Semiconductor
The ON Semiconductor MMBFJ201 is an N-Channel amplifier designed for low-level audio and general purpose applications.
The MMBFJ201 comes in a SOT-23 3-pin package.
The MMBFJ201 comes in a SOT-23 3-pin package.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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