onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Brand:
- onsemi
22 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 2)
£3.70
(exc. VAT)
£4.44
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 18 | £3.70 | £7.40 |
| 20 - 98 | £3.075 | £6.15 |
| 100 - 448 | £2.68 | £5.36 |
| 450 - 898 | £2.53 | £5.06 |
| 900 + | £2.285 | £4.57 |
| *price indicative | ||
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.2 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Brand:
- onsemi
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