onsemi FGA40N65SMD, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

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Subtotal (1 pack of 2 units)*

£8.43

(exc. VAT)

£10.116

(inc. VAT)

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  • Plus 6 left, shipping from 23 February 2026
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2 - 18£4.215£8.43
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Packaging Options:
RS Stock No.:
864-8782
Mfr. Part No.:
FGA40N65SMD
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

349W

Package Type

TO-3PN

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

Field Stop

Standards/Approvals

No

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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